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RF Power Detector
with Shutdown Control
ABSOLUTE MAXIMUM RATINGS
V CC to GND.............................................................-0.3V to +6V
RFIN to GND ......................................... -0.3V to + (V CC + 0.3V)
OUT to GND .......................................... -0.3V to + (V CC + 0.3V)
RFIN Input Power .......................................................... +10dBm
Continuous Power Dissipation (T A = +70 N C)
4-Bump WLP (derate 3mW/ N C above +70 N C).............238mW
Junction-to-Ambient Thermal
Resistance ( B JA ) (Note 1) ..........................................335 N C/W
Operating Temperature Range .......................... -40 N C to +85 N C
Storage Temperature Range............................ -65 N C to +160 N C
Junction Temperature ....................................................+150 N C
Bump Temperature (soldering, Note 2)
Infrared (15s) ...............................................................+260 N C
Soldering Temperature (reflow) ......................................+240 N C
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a
4-layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
Note 2: For detailed information on soldering, refer to Application Note 1891: Wafer-Level Packaging (WLP) and Its Applications .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
CAUTION! ESD SENSITIVE DEVICE
DC ELECTRICAL CHARACTERISTICS
(V CC = 2.7V to 5.0V, no RF signal applied, T A = -40 N C to +85 N C. Typical values are at V CC = 2.8V, T A = +25 N C, unless otherwise
noted.) (Note 3)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
Supply Current
Idle Output Voltage
2.7
3.9
35
5.0
6
V
mA
mV
Output Current Source Capability
Output Current Sink Capability
P IN = -5dBm, V OUT forced 100mV lower than open-
circuit output voltage
P IN = -25dBm, V OUT forced 10mV higher than open-
circuit output voltage
1000
75
2300
150
F A
F A
Shutdown Current
V SHDN = 0V
25
50
F A
SHDN Logic-High
SHDN Logic-Low
V IH , including 2k I resistor
V IL , including 2k I resistor
1.2
0.45
V
V
Turn-On Time
RF Step-Response Time
SHDN transitions to V IH , V OUT is within 90% of final
value (Note 4)
RF transitions from < -25dBm to -5dBm, V OUT is
within 90% of final value, 1k W + 10pF load (Note 4)
1.5
140
2
200
F s
ns
2
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